| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -160V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −150V |
| 集电极连续输出电流ICCollector Current(IC) | −500mA/-0.5A |
| 截止频率fTTranstion Frequency(fT) | 100~300MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 60~240 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 225mW/0.225W |
| Description & Applications | PNP epitaxial planar transistor General Purpose Transistors FEATURES We declare that the material of product compliance with RoHS requirements. |
| 描述与应用 | PNP外延平面晶体管 通用晶体管 特点 我们声明，产品符合RoHS要求的材料。 |