| 反向电压VrReverse Voltage | 80V |
| 平均整流电流IoAverage Rectified Current | 100mA/0.1A |
| 最大正向压降VFForward Voltage(Vf) | 1.2V |
| 反向恢复时间TrrReverse Recovery Time | 10ns |
| 最大耗散功率PdPower Dissipation | |
| Description & Applications | Silicon epitAxiAl plAnAr type For switching circuits FeAtures • Four isolAted elements contAined in one pAckAge, Allowing highdensity mounting • CentrosymmetricAl wiring, Allowing to free from the tAping direction • The mirror imAge wiring of mA6X123 (mA123) • Short reVerse recoVery time • SmAll terminAl cApAcitAnce Ct • High breAkdown VoltAge: VR = 80 V |
| 描述与应用 | •硅外延平面型对于开关电路 •4个孤立的元素包含在一个包装 •允许高密度安装 •中心对称的布线，使摆脱录音方向 •的mA6x123镜像布线（mA123） •短的反向恢复时间 •小端电容CT •高击穿电压：VR = 80 V |