| 反向电压VrReverse Voltage | 30V |
| 平均整流电流IoAVerage Rectified Current | 200mA/0.2A |
| 最大正向压降VFForward Voltage(Vf) | 550mV/0.55V |
| 最大耗散功率PdPower dissipation | |
| Description & Applications | •Schottky Barrier Diodes (SBD) •Silicon epitaxial planar type •For super-high speed switching circuit •For small current rectification •Small S-mini type package allowing high-density mounting •Allowing to rectify under (IF(AV)= 200 mA) condition |
| 描述与应用 | •肖特基势垒二极管（SBD） •硅外延平面型 •对于超高速开关电路 •对于小电流整流 •小的迷你S型封装,允许高密度安装 •允许整流条件（IF（AV）= 200毫安） |