| 反向电压VrReverse Voltage | 30V |
| 平均整流电流IoAVerage Rectified Current | 20mA |
| 最大正向压降VFForward Voltage(Vf) | 1V |
| 最大耗散功率PdPower dissipation | |
| Description & Applications | • Schottky Barrier Diodes (SBD) • Silicon epitaxial planar type • For switching • Two elements are contained in one package, allowing highdensity mounting • Low forward voltage VF , optimum for low voltage rectification • Optimum for high frequency rectification because of its short reverse recovery time(trr) •Common Anode Schottky Barrier diode |
| 描述与应用 | •肖特基势垒二极管（SBD） •硅外延平面型 •对于开关 •两个元素都包含在一个包，允许高密度安装 •低正向电压VF，适用于低电压整流 •最适用于高频率整流，因为其反向恢复时间短（TRR） •共阳极肖特基二极管 |