| 最大源漏极电压VdsDrain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -10V |
| 最大漏极电流IdDrain Current | -200mA/-0.2A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 54Ω@ VGS = -1.5V, ID = -1mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.4~-1.4V |
| 耗散功率PdPower Dissipation | 800mW/0.8W |
| Description & Applications | General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 1.5V drive. • Composite type with 2 MOSFETs contained in a single package |
| 描述与应用 | 通用开关设备应用 特点 •低导通电阻。 •超高速开关。 •1.5V驱动。 •一个单一的包装中包含的2MOSFET的复合型 |