| 最大源漏极电压VdsDrain-Source Voltage | -50V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -20V |
| 最大漏极电流IdDrain Current | -280mA/-0.28A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 9.1Ω@ VGS = -4V, ID = -40mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1~-2.5V |
| 耗散功率PdPower Dissipation | 800mW/0.8W |
| Description & Applications | Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. •4 V drive. • Composite type with 2 MOSFETs contained in a single package |
| 描述与应用 | 超高速开关应用 特点 •低导通电阻。 •超高速开关。 •4 V驱动。 •一个单一的包装中包含的2MOSFET的复合型 |