| 最大源漏极电压VdsDrain-Source Voltage | 30V/-30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 10V/10V |
| 最大漏极电流IdDrain Current | 350mA/-200mA |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 12.8Ω@ VGS =1.5V, ID =10mA/54Ω@ VGS =-1.5V, ID =-1mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.4~1.3V/-0.4~-1.4V |
| 耗散功率PdPower Dissipation | 800mW/0.8W |
| Description & Applications | Ultrahigh-Speed Switching Applications Features • The MCH6613 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ONresistance and high-speed switching, thereby enabling high-density mounting. • Excellent ON-resistance characteristic. • 2.5V drive. |
| 描述与应用 | 超高速开关应用 特点 •MCH6613采用N沟道MOSFET和一个P沟道MOSFET，具有低导通电阻和高速开关，从而实现高密度安装。 •优秀的导通电阻特性。 •2.5V驱动。 |