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商品参数:

  • 型号:MJD2955
  • 厂家:ON
  • 批号:05+
  • 整包数量:1000
  • 最小起批量:10
  • 标记/丝印/代码/打字:R2N
  • 封装:SOT-223/TO-261AA
  • 技术文档:下载

集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO)-70V
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO)−60V
集电极连续输出电流ICCollector Current(IC)−10A
截止频率fTTranstion Frequency(fT)2MHz
直流电流增益hFEDC Current Gain(hFE)20~100
管压降VCE(sat)Collector-Emitter SaturationVoltage -1.1V
耗散功率PcPoWer Dissipation1.75W
Description & ApplicationsPNP epitaxial planar transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves • Lead Formed Version Available in 16 mm Tape and Reel • Electrically Similar to MJE2955 and MJE3055 • DC Current Gain Specified to 10 Amperes • High Current Gain–Bandwidth Product
描述与应用PNP外延平面晶体管 DPAK表面贴装应用 专为通用放大器和低速开关应用。 •铅形成表面贴装塑料套中的应用 •直引线型塑料套 •铅形成版本在16毫米编带和卷轴 •电类似MJE2955和MJE3055 •指定至10安培的直流电流增益 •高电流增益带宽积
规格书PDF 下载

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深圳市爱瑞凯电子科技有限公司
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MJD2955
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