| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流ICCollector Current(IC) | 20mA |
| 截止频率fTTranstion Frequency(fT) | 1GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 25~300 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | |
| Description & Applications | The RF Line NPN Silicon High-Frequency TRANSISTOR Designed for thick and thin–film circuits using surface mount components and requiring low–noise, high–gain signal amplification at frequencies to 1.0 GHz. • High Gain — Gpe = 17 dB Typ @ f = 450 MHz • Low Noise — NF = 2.5 dB Typ @ f = 450 MHz • Available in tape and reel packaging options: T1 suffix = 3,000 units per reel |
| 描述与应用 | RF线NPN硅 高频三极管 专为使用表面贴装元件的厚薄膜电路 需要低噪声，高增益信号放大在频率1.0 千兆赫。 •高增益 - GPE=17 dB（典型值）@ F =450兆赫 •低噪声 - NF=2.5 dB（典型值）@ F =450兆赫 •可在磁带和卷轴包装选择： T1后缀=3000单位每卷 |