| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 1.4GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 30~250 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 400mV/0.4V |
| 耗散功率PcPower Dissipation | |
| Description & Applications | The RF Line NPN Silicon High-Frequency TRANSISTOR Designed for small–signal amplification at frequencies to 500 MHz. Specifically packaged for use in thick and thin–film circuits using surface mount components. • High Gain — Gpe = 15 dB Typ @ f = 200 MHz • Low Noise — NF = 4.5 dB Typ @ f = 200 MHz • Available in tape and reel packaging options: T1 suffix = 3,000 units per reel |
| 描述与应用 | RF线NPN硅 高频三极管 专为小信号放大到500 MHz的频率。 具体使用厚薄膜电路，采用表面贴装封装 组件。 •高增益 - GPE=15 dB（典型值）@ F =200兆赫 •低噪声 - NF= 4.5 dB（典型值）@ F =200兆赫 •可在磁带和卷轴包装选择： T1后缀=3000单位每卷 |