| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 40V |
| 集电极连续输出电流ICCollector Current(IC) | 200mA/0.2A |
| 截止频率fTTranstion Frequency(fT) | 300Mhz |
| 直流电流增益hFEDC Current Gain(hFE) | 40~300 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 200mV~300mV |
| 耗散功率PcPower Dissipation | |
| Description & Applications | NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ® As complementary type, the PNP transistor MMBT3906 is recommended. ® This transistor is also available in the TO-92 case with the type designation 2N3904. |
| 描述与应用 | NPN硅外延平面晶体管 开关和放大器应用。 ®作为互补型，PNP 晶体管MMBT3906推荐。 ®这个晶体管也可以在TO-92 同类型案件指定2N3904。 |