| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 40V |
| 集电极连续输出电流ICCollector Current(IC) | 200mA/0.2A |
| 截止频率fTTranstion Frequency(fT) | 300MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 300mV/0.3V |
| 耗散功率PcPower Dissipation | 330mW/0.33W |
| Description & Applications | Features • NPN Silicon Switching Transistor • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Complementary type: SMBT3906 (PNP) |
| 描述与应用 | 特点 •NPN型硅开关晶体管 •高直流电流增益：0.1mA至100mA的 •低集电极 - 发射极饱和电压 •互补型：SMBT3906（PNP） |