| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -350V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | -350V |
| 集电极连续输出电流ICCollector Current(IC) | −500mA/-0.5A |
| 截止频率fTTranstion Frequency(fT) | 40~200MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 20~200 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -1000mV/-1V |
| 耗散功率PcPoWer Dissipation | 225mW/0.225W |
| Description & Applications | High Voltage Transistor PNP Silicon |
| 描述与应用 | PNP硅高压晶体管 |