| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 500V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 400V |
| 集电极连续输出电流ICCollector Current(IC) | 300mA/0.3A |
| 截止频率fTTranstion Frequency(fT) | 50Mhz |
| 直流电流增益hFEDC Current Gain(hFE) | 40~240 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 400mV~750mV |
| 耗散功率PcPower Dissipation | 350mW/0.35W |
| Description & Applications | High Voltage Transistors *Collector-Emitter voltage: VCEO=400V (UTC MMBTA44) VCEO=350V (UTC MMBTA45) *Collector current up to 300mA *Complement to UTC MMBTA94/93 *Power Dissipation: PD(max)=350mW |
| 描述与应用 | 高电压晶体管 *集电极 - 发射极电压VCEO= 400V（UTC MMBTA44） VCEO=350V（MMBTA45 UTC）， *集电极电流高达300mA *补充UTC MMBTA94/93的 *功耗：PD（最大）=350MW |