| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −20V |
| 集电极连续输出电流ICCollector Current(IC) | -50mA |
| 截止频率fTTranstion Frequency(fT) | 600MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 60 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 225mW/0.225W |
| Description & Applications | PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. |
| 描述与应用 | PNP RF晶体管 这个装置是专为通用RF放大器和混频器应用到250 MHz的集电极电流范围在1.0 MA到30 mA。 |