| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 45V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 30V |
| 集电极连续输出电流ICCollector Current(IC) | 3A |
| 截止频率fTTranstion Frequency(fT) | 72MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 60~85 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 150mV~450mV |
| 耗散功率PcPower Dissipation | |
| Description & Applications | Bipolar Power Transistors NPN Silicon • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 85 (Min) @ IC = 0.8 Adc = 60 (Min) @ IC = 3.0 Adc • Low Collector –Emitter Saturation Voltage — VCE(sat) = 0.2 Vdc (Max) @ IC = 1.2 Adc = 0.45 Vdc (Max) @ IC = 3.0 Adc • SOT–223 Surface Mount Packaging |
| 描述与应用 | 双极功率晶体管 NPN硅 集电极 - 发射极耐受电压 - VCEO（SUS） = 30 VDC（最小）@ IC= 10 MADC •高DC电流增益 - HFE=85（分钟）@ IC= 0.8 ADC =60（分钟）@ IC= 3.0 ADC •低集电极 - 发射极饱和电压 - VCE（sat）的 = 0.2 VDC（最大）@ IC= 1.2 ADC = 0.45 VDC（最大）@ IC= 3.0 ADC •SOT-223表面贴装包装 |