| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -45V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −30V |
| 集电极连续输出电流ICCollector Current(IC) | -3A |
| 截止频率fTTranstion Frequency(fT) | 110MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 220 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −550mV/-0.55V |
| 耗散功率PcPoWer Dissipation | 1.56W |
| Description & Applications | Bipolar Power Transistors PNP Silicon Features • Pb−Free Packages are Available • High DC Current Gain • Low Collector −Emitter Saturation Voltage • SOT−223 Surface Mount Packaging |
| 描述与应用 | 双极功率晶体管PNP硅 特点 •无铅包可用 •高直流电流增益 •低集电极 - 发射极饱和电压 •SOT-223表面贴装包装 |