| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 12V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 5V |
| 集电极连续输出电流ICCollector Current(IC) | 25mA |
| 截止频率fTTranstion Frequency(fT) | 12Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 13.6W |
| Description & Applications | • NPN Silicon low noise, RF TRANSISTOR • Low Noise Figure, NFmin = 1.0 dB (Typ) @1.0 GHz, 3.0 V and 1.0 mA • High Current Gain–Bandwidth Product, fτ= 12 GHz @ 3.0 V and 10 mA • Maximum Stable Gain, 17 dB @ 1.0 GHz, 3.0 V and 8.0 mA • Output Third Order Intercept, OIP3 = 23 dBm @ 1.0 GHz, 3.0 V and 10 mA • Fully Ion–Implanted with Gold Metallization and Nitride Passivation |
| 描述与应用 | •NPN硅低噪声，射频晶体管 •低噪声系数的NFmin= 1.0分贝（典型值）的1.0 GHz，3.0 V和1.0 MA •高电流增益带宽积，Fτ = 12 GHz@3.0 V和10毫安 •最大稳定增益，17 dB@1.0主频，3.0 V和8.0毫安 •输出三阶截，OIP3=23 dBm@1.0主频，3.0 V和10毫安 •全镀金氮化硅钝化离子注入 |