| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 9Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 50 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | |
| Description & Applications | • The RF Line NPN Silicon Low Noise Transistors Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well suited for low voltage wireless applications. This device features a 9 GHz DC current gain–bandwidth product with excellent linearity. • Low Noise Figure, NFmin = 1.4 dB (Typ) @ 1 GHz @ 5 mA • High Current Gain–Bandwidth Product, f t = 9 GHz @ 15 mA • Maximum Stable Gain = 18 dB @ 1 GHz @ 5 mA • Output Third Order Intercept, OIP3 = +29 dBm @ 1 GHz @ 10 mA • Fully Ion–Implanted with Gold Metallization and Nitride Passivation • Available in Tape and Reel Packaging Options: T1 Suffix = 3,000 Units per Reel |
| 描述与应用 | •该RF线NPN硅低噪声晶体管 摩托罗拉的MRF949是一个高性能的NPN晶体管设计用于 高增益，低噪声小信号放大器。 MRF949非常适合低 电压的无线应用。该器件具有9 GHz的直流电流 增益带宽产品具有优异的线性度。 •低噪声系数，的NFmin1.4分贝（典型值）@ 1 GHz的@5毫安 •高电流增益带宽积，F 吨 =9 GHz的15毫安 •最大稳定增益= 18分贝@1 GHz的@5毫安 •输出三阶截，OIP3=+29 dBm的@ 1 GHz的@ 10毫安 •全镀金氮化硅钝化离子注入 •可在磁带和卷轴包装选项： T1后缀= 3,000单位每卷 |