| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) | 9Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 75~150 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 322mW/0.322W |
| Description & Applications | • The RF Line NPN Silicon Low Noise High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages. • Fully Implanted Base and Emitter Structure • 18 Finger, 1.25 Micron Geometry with Gold Top Metal • Gold Sintered Back Metal • Available in tape and reel packaging options: T1 suffix = 3,000 units per reel |
| 描述与应用 | •RF线NPN硅高频低噪声晶体管 设计用于在高增益，低噪声小信号放大器。该系列产品 具有良好的宽带线性，并提供多种封装。 •完全植入基极和发射极结构 •18个手指，1.25微米几何与黄金顶部的金属 •黄金背面金属烧结 •可在磁带和卷轴包装选择： T1后缀=3000单位每卷 |