| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) Q1/Q2 |
10V/13V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) Q1/Q2 |
5V/6V |
|
集电极连续输出电流IC
Collector Current(IC) Q1/Q2
|
25mA/40mA |
|
直流电流增益hFE DC Current Gain(hFE)
Q1/Q2
|
70~140/100~160 |
| 截止频率fT Transtion Frequency(fT) Q1/Q2 |
12000MHz/6000MHz |
| 耗散功率Pc Power Dissipation Q1/Q2 |
100mW/90mW |
| Description & Applications |
Features • TOSHIBA Transistor Silicon NPN Epitaxial Planar Type • Superior noise characteristics • Superior performance in buffer and oscillator applications • Two devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6. • VHF~UHF Band Low-Noise Amplifier Applications |
| 描述与应用 |
特点 •东芝晶体管NPN硅外延平面型 •高级噪声特性 •缓冲和振荡器的应用中的卓越性能 •两个设备都纳入在细间距，小型模具包（6针）：FS6。 •VHF〜UHF频段低噪声放大器应用 |