| 最大源漏极电压VdsDrain-Source Voltage | 60V/-60V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V/20V |
| 最大漏极电流IdDrain Current | 510mA/-340mA |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 4Ω@ VGS =4.5V, ID =350mA/7.5Ω@ VGS =-4.5V, ID =-250mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 1~2.5V/-1~-3.5V |
| 耗散功率PdPower Dissipation | 800mW/0.8W |
| Description & Applications | Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N & P-Channel Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. These device is particularly suited for low voltage, low current, switching, and power supply applications. Features High saturation current • High density cell design for low RDS(ON) • Proprietary SuperSOT –6 package: design using copper lead frame for superior thermal and electrical capabilities |
| 描述与应用 | 双N和P沟道增强型场效应晶体管 概述 这些双N＆P沟道增强型场效应晶体管都采用飞兆半导体专有的，高细胞密度，DMOS技术。这非常高密度工艺已旨在最大限度地减少通态电阻，提供坚固可靠的性能和快速切换。在这些设备特别适合于低电压，低电流，开关，电源中的应用。 特点 高饱和电流 •高密度电池设计的低RDS（ON） •专有SuperSOT-6包装设计采用铜引线框架的卓越热和电气性能 |