| Description & Applications | Dual N-Channel Enhancement Mode Field Effect Transistor General Description These dual N-Channel Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. These device is particularly suited for low voltage, low current, switching, and power supply applications. Features • High saturation current • High density cell design for low RDS(ON) • Proprietary SOT –6 package: design using copper lead frame for superior thermal and electrical capabilities |