| 最大源漏极电压Vds Drain-Source Voltage | 25V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 3.8A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.045Ω/Ohm @6A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.0-2.0V |
| 耗散功率Pd Power Dissipation | 22.3W |
| Description & Applications | N-Channel DPAK Features • Planar HD3e Process for Fast Switching Performance • Low RDS(on) to Minimize Conduction Loss • Low Ciss to Minimize Driver Loss • Low Gate Charge • Optimized for High Side Switching Requirements in High-Ef ficiency DC-DC Converters |
| 描述与应用 | 功率MOSFET 23 A，25 V，N沟道DPAK •的平面HD3e过程快速开关性能 •低的RDS（on） 减少传导损耗 •低西塞 最小化驱动器损失 •低栅极电荷 •优化高侧开关的要求 高效率的DC-DC转换器 |