| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 35mΩ@ VGS = -4.5V, ID = -6A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1~3V |
| 耗散功率Pd Power Dissipation | 1W |
| Description & Applications | Power MOSFET Features • Low RDS(on) • Low Gate Charge • Pb−Free Package is Available Applications • Load Switch • Notebook PC • Desktop PC |
| 描述与应用 | 功率MOSFET 特点 •低的RDS（on） •低栅极电荷 •无铅包装是可用 应用 •负荷开关 •笔记本电脑 •台式电脑 |