| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 5.2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 45mΩ@ VGS =2.5V, ID =4.3A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.6V |
| 耗散功率Pd Power Dissipation | 1.3W |
| Description & Applications | Power MOSFET N−Channel Chip FET Features • Low RDS(on) for Higher Efficiency • Logic Level Gate Drive • Miniature Chip FET Surface Mount Package Saves Board Space • Pb−Free Package is Available Applications • Power Management in Portable and Battery−Powered Products; i.e.,Cellular and Cordless Telephones and PCMCIA Cards |
| 描述与应用 | 功率MOSFET N沟道芯片FET 特点 •低RDS（ON），以获得更高效率 •逻辑电平栅极驱动器 •微型芯片FET表面贴装封装节省电路板空间 •无铅包装是可用 应用 •电源管理在便携式和电池供电的产品，也就是说，蜂窝电话和无绳电话和PCMCIA卡 |