| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流ICCollector Current(IC) | 120mA/0.12A |
| 截止频率fTTranstion Frequency(fT) | 9Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~250 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 500mW/0.5W |
| Description & Applications | NPN 9 GHz wideband transistor High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. |
| 描述与应用 | NPN9 GHz的宽带晶体管 高功率增益 低噪声系数 高转换频率 镀金确保 出色的可靠性。 |