| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) | 8Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 50~100 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 365mW/0.365W |
| Description & Applications | • UHF wideband transistor • Small size • Low noise • Low distortion • High gain • Gold metallization ensures excellent reliability. |
| 描述与应用 | •UHF宽带晶体管 •小尺寸 •低噪音 •低失真 •高增益 •镀金确保出色的可靠性。“ |