| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −15V |
| 集电极连续输出电流ICCollector Current(IC) | -250mA/-0.25A |
| 截止频率fTTranstion Frequency(fT) | 280MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -250mV/-0.25V |
| 耗散功率PcPoWer Dissipation | 250mW/0.25W |
| Description & Applications | 15 V low VCE(sat) PNP transistor FEATURES • Low collector-emitter saturation voltage • High current capabilities • Improved thermal behaviour due to flat leads. • NPN complement: PBSS2515F. APPLICATIONS • General purpose switching and muting • Low frequency driver circuits • LCD backlighting • Audio frequency general purpose amplifier applications • Battery driven equipment (mobile phones, video cameras and hand-held devices). |
| 描述与应用 | 15伏的低VCE（sat）的PNP晶体管 特点 •低集电极 - 发射极饱和电压 •高电流能力 •改进的热行为由于平坦的线索。 •NPN补充：PBSS2515F。 应用 •通用开关和静音 •低频驱动电路 •LCD背光 •音频通用放大器应用 •电池驱动设备（手机，摄像机和手持设备） |