| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 40V/-40V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 40V/-40V |
| 集电极连续输出电流IC Collector Current(IC) | 1A/-1A |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 300~900 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 250mV-250mV |
| 耗散功率Pc Power Dissipation | 600mW |
| Description & Applications | Features • 40 V low VCEsat NPN/PNP transistor • 600 mW total power dissipation • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replaces two SOT23 packaged low VCEsat transistors on same PCB area • Reduces required PCB area • Reduced pick and place costs. APPLICATIONS • General purpose switching and muting • LCD backlighting • Supply line switching circuits • Battery driven equipment (mobile phones, video cameras and hand-held devices). |
| 描述与应用 | 特点 •40 V低VCEsat NPN/ PNP晶体管 •600 mW的总功耗 •低集电极 - 发射极饱和电压 •高电流能力 •提高设备的可靠性，由于产生的热量减少 •替换两个SOT23包装相同的PCB面积上的晶体管的低VCEsat •减少所需PCB面积 •减少取放成本。 应用 •通用开关和静音 •LCD背光 •供电线路开关电路 •电池驱动设备（手机，摄像机和手持设备）。 |