| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流ICCollector Current(IC) | 3A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 90mV~290mV |
| 耗散功率PcPower Dissipation | 750mW/0.75W |
| Description & Applications | NPN transistor FEATURES • High current capabilities • Low VCEsat . APPLICATIONS • Heavy duty battery powered equipment (Automotive, Telecom and Audio/Video) such as motor and lamp drivers • VCEsat critical applications such as the latest low supply voltage IC applications • All battery driven equipment to save battery power. DESCRIPTION NPN low VCEsat transistor in a SC-74 plastic package. |
| 描述与应用 | NPN晶体管 特点 •高电流能力 •低VCESAT 。 应用 •重型电池供电设备（汽车， 电信与音频/视频）电机和照明等 司机 VCE监测的关键应用，如最新的低电源 电压IC应用 •所有电池驱动的设备，以节省电池电力。 说明 NPN低VCEsat 在SC-74塑料封装晶体管。 |