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商品参数:

  • 型号:DTA114TET1G
  • 厂家:ON
  • 批号:06NOPB 06+ROHS2400
  • 整包数量:3000
  • 最小起批量:10
  • 标记/丝印/代码/打字:6EN
  • 封装:SOT-523/SC-75
  • 技术文档:下载

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)-50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)-50V
集电极连续输出电流IC Collector Current(IC)-100mA/-0.1A
基极输入电阻R1 Input Resistance(R1)10KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)
电阻比(R1/R2) Resistance Ratio
直流电流增益hFE DC Current Gain(hFE)100~600
截止频率fT Transtion Frequency(fT)250MHz
耗散功率Pc Power Dissipation0.15W/150mW
Description & ApplicationsFeature •Digital transistors (built-in resistor) •Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). •The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. •Only the on/off conditions need to be set for operation, making device design easy
描述与应用特点 •数字晶体管(内置电阻) •内置启用偏置电阻器的配置,逆变电路没有连接外部输入电阻(见等效电路)。 •偏置电阻组成的薄膜电阻完全隔离,允许正面偏置输入。他们也有优势,几乎完全消除了寄生效应。 •只有开/关条件需要设置操作,使装置的设计容易
规格书PDF 下载

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深圳市爱瑞凯电子科技有限公司
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DTA114TET1G
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