| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V |
| 集电极连续输出电流IC Collector Current(IC) | -100mA/-0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 0.21 |
| 直流电流增益hFE DC Current Gain(hFE) | 100 |
| 截止频率fT Transtion Frequency(fT) | 180MHz |
| 耗散功率Pc Power Dissipation | 0.25W/250mW |
| Description & Applications | Features and benefits • PNP resistor-equipped transistors • 100 mA output current capability • Reduces component count • Built-in bias resistors • Reduces pick and place costs • Simplifies circuit design • AEC-Q101 qualified Applications • Digital applications in automotive and industrial segments • Cost-saving alternative for BC847/857 series in digital applications • Control of IC inputs • Switching loads |
| 描述与应用 | 特点和优点 •PNP电阻配备晶体管 •100 mA的输出电流能力 •减少了元件数量 •内置偏置电阻 •减少取放成本 •简化电路设计 •通过AEC-Q101标准 应用 •数字应用在汽车和工业领域 •节省成本的替代BC847/857系列数字应用 •控制IC的输入 •负载开关 |