| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V |
| 集电极连续输出电流IC Collector Current(IC) | -100mA/-0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 2.2KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 0.22 |
| 直流电流增益hFE DC Current Gain(hFE) | 35 |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | 0.25W/250mW |
| Description & Applications | FEATURES • PNP resistor-equipped transistors • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. |
| 描述与应用 | 特点 •PNP电阻配备晶体管 •内置偏置电阻 •简化电路设计 •减少元件数量 •减少取放成本。 应用 •通用开关和放大 •逆变器和接口电路 •电路驱动。 |