| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) Q1/Q2 |
50V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) Q1/Q2 |
40V/-40V |
| 集电极连续输出电流IC Collector Current(IC) Q1/Q2 |
100mA/-100mA |
| 截止频率fT Transtion Frequency(fT) |
100MHz |
| 直流电流增益hFE DC Current Gain(hFE) Q1/Q2 |
120/120 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage Q1/Q2 |
200mV/-200mV |
| 耗散功率Pc Power Dissipation Q1/Q2 |
300mW/0.3W |
| Description & Applications |
Features • NPN/PNP general purpose transistors • 300 mW total power dissipation • Very small 1.6 × 1.2 mm ultra thin package • Self alignment during soldering due to straight leads • Replaces two SC-75/SC-89 packaged transistors on same PCB area • Reduced required PCB area • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Complementary MOSFET driver for switch mode power supply • Complementary driver for audio amplifiers. |
| 描述与应用 |
特点 •NPN / PNP通用晶体管 •300 mW的总功耗 •非常小的1.6×1.2毫米的超薄封装 •自对准直引线在焊接过程中，由于 •替换两个SC-75/SC-89包装相同的PCB面积上的晶体管 •减少所需PCB面积 •减少取放成本。 应用 •通用开关和放大 •互补开关模式电源MOSFET驱动器 •互补驱动器，音频放大器。 |