| 最大源漏极电压VdsDrain-Source Voltage | ±40 V |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | －40 V |
| 漏极电流(Vgs=0V)IDSSDrain Current | 2 mA |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | －3.0~－0.5V |
| 耗散功率PdPower Dissipation | 300mW/0.3W |
| Description & Applications | N-channel junction FET PMBFJ113 General description Symmetrical N-channel junction FETs in a SOT23 package. Features and benefits High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (< 30 for PMBFJ111). Applications Analog switches Commutators Multiplexers Thin and thick film hybrids. |
| 描述与应用 | N沟道结型场效应管 PMBFJ113 说明 对称N沟道结场效应晶体管采用SOT23封装。 特点 高速开关 漏极和源极连接的互换性 在零电压（<30为PMBFJ111），低导通电阻。 应用 模拟开关 换向器 多路复用器 薄厚膜混合动力汽车。 |