| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −40V |
| 集电极连续输出电流ICCollector Current(IC) | −100mA/-0.1A |
| 截止频率fTTranstion Frequency(fT) | 150MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -400mV/-0.4V |
| 耗散功率PcPoWer Dissipation | 250mW/0.25W |
| Description & Applications | PNP general purpose transistor FEATURES • Low current • Low voltage • NPN complement: PMBS3904 APPLICATIONS • General purpose switching and amplification, e.g.telephony and professional communication equipment. |
| 描述与应用 | PNP通用晶体管 特点 •低电流 •低电压 •NPN补充：PMBS3904 应用 •通用开关和放大，的egtelephony和专业的通信设备。 |