| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -12V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | -12V |
| 集电极连续输出电流ICCollector Current(IC) | -80mA |
| 截止频率fTTranstion Frequency(fT) | 500MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 30~120 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -60mV |
| 耗散功率PcPoWer Dissipation | 350mW/0.35W |
| Description & Applications | PNP 1 GHz switching transistor General description PNP general purpose switching transistor in a SOT23 package. Features Volume delivery Short lead times Smallest packages |
| 描述与应用 | PNP1 GHz的开关晶体管 一般说明 PNP通用开关采用SOT23封装的晶体管。 特点 批量交付 交货时间短 最小的封装 |