| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -160V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −150V |
| 集电极连续输出电流ICCollector Current(IC) | −300mA/-0.3A |
| 截止频率fTTranstion Frequency(fT) | 100~300MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 60~240 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 250mW/0.25W |
| Description & Applications | PNP high-voltage transistor FEATURES • Low current • Low voltage APPLICATIONS •Switching and amplification in high voltage applications such as telephony. DESCRIPTION PNP switching transistor in a SOT23 plastic package. NPN complement: PMBT5550 |
| 描述与应用 | PNP高电压晶体管 特点 •低电流 •低电压 应用 •开关和放大在高电压应用，如电话。 说明 PNP开关晶体管在SOT23塑料包装。 NPN补充：PMBT5550 |