| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 80V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 80V |
| 集电极连续输出电流ICCollector Current(IC) | 500mA/0.5A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 250mV/0.25V |
| 耗散功率PcPower Dissipation | 250mW/0.25W |
| Description & Applications | FEATURES • High current (max. 500 mA) • Low voltage (max. 80 V). APPLICATIONS • General purpose switching and amplification in e.g. telephony and professional communication equipment. DESCRIPTION NPN transistor in a SOT23 plastic package |
| 描述与应用 | 特点 •高电流（最大500毫安） •低电压（最大80 V）。 应用 •通用开关和放大，如 电话和专业的通信设备。 说明 NPN晶体管在SOT23塑料包装 |