| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -80V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −80V |
| 集电极连续输出电流ICCollector Current(IC) | −500mA/-0.5A |
| 截止频率fTTranstion Frequency(fT) | 50MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -250mV/-0.25V |
| 耗散功率PcPoWer Dissipation | 250mW/0.25W |
| Description & Applications | PNP general purpose transistor FEATURES • High current • Low voltage APPLICATIONS • General purpose switching and amplification, e.g. telephony and professional communication equipment. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complement: PMBTA06. |
| 描述与应用 | PNP通用晶体管 特点 •高电流 •低电压 应用 •通用开关和放大，如电话和专业的通信设备。 说明 PNP晶体管在SOT23塑料包装。 NPN补充：PMBTA06。 |