| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) Q1/Q2 |
50V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) Q1/Q2 |
50V/-50V |
| 集电极连续输出电流IC Collector Current(IC) Q1/Q2 |
100mA/-100mA |
| Q1基极输入电阻R1 Input Resistance(R1) |
2.2KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q1电阻比(R1/R2) Q1 Resistance Ratio |
0.047 |
| Q2基极输入电阻R1 Input Resistance(R1) |
2.2KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q2电阻比(R1/R2) Q2 Resistance Ratio |
0.047 |
| 直流电流增益hFE DC Current Gain(hFE) |
100 |
| 截止频率fT Transtion Frequency(fT) Q1/Q2 |
|
| 耗散功率Pc Power Dissipation Q1/Q2 |
300mW/0.3W |
| Description & Applications |
Features • PNP/PNP resistor-equipped transistors; • 300 mW total power dissipation • Very small 1.6 × 1.2 mm ultra thin package • Excellent coplanarity due to straight leads • Replaces two SC-75/SC-89 packaged transistors on same PCB area • Reduces required PCB area • Reduced pick and place costs |
| 描述与应用 |
特点 •PNP / PNP电阻配备晶体管; •300 mW的总功耗 •非常小的1.6×1.2毫米的超薄封装 •优秀的共面性，由于直引线 •替换两个SC-75/SC-89包装相同的PCB面积上的晶体管 •减少所需PCB面积 •减少取放成本 |