| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -300V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −300V |
| 集电极连续输出电流ICCollector Current(IC) | −500mA/-0.5A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 40 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 1.5W |
| Description & Applications | PNP Silicon High Voltage Transistor High breakdown voltage Low collector-emitter saturation voltage Complementary type: PZTA 42 (NPN) |
| 描述与应用 | PNP硅高压晶体管 高击穿电压 低集电极 - 发射极饱和电压 互补式：PZTA42（NPN） |