| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -30V/30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -30V/30V |
| 集电极连续输出电流IC Collector Current(IC) | -1.5A/1.5A |
| 截止频率fT Transtion Frequency(fT) | 280MHz/300MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 270~680 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | -200mA/140mA |
| 耗散功率Pc Power Dissipation | 500mW |
| Description & Applications | Features • General purpose transistor • Low.VCE(sat) • Small package |
| 描述与应用 | 特点 •通用晶体管 •Low.VCE（sat） •小型封装 |