| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 2.2KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 0.047 |
| 直流电流增益hFE DC Current Gain(hFE) | 80 |
| 截止频率fT Transtion Frequency(fT) | 250MHz |
| 耗散功率Pc Power Dissipation | 0.1W/100mW |
| Description & Applications | Features Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. Wide range of resistor values are available to use in various circuit designs. Complementary to RN2105FT |
| 描述与应用 | 特性 开关电路，逆变电路，接口电路和驱动器电路应用 高密度安装是可能因为设备容纳在非常薄TESM包。 集成了偏置电阻晶体管减少了部件数量。 减少零件计数使能越来越紧凑设备和制造节省组装成本。 电阻值范围宽可使用在各种电路设计。 对管是RN2105FT |