| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流IC Collector Current(IC) | 300mA/0.3A |
| 基极输入电阻R1 Input Resistance(R1) | 2.2KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| 电阻比(R1/R2) Resistance Ratio | |
| 直流电流增益hFE DC Current Gain(hFE) | 200 |
| 截止频率fT Transtion Frequency(fT) | 30MHz |
| 耗散功率Pc Power Dissipation | 0.2W/200mW |
| Description & Applications | Muting and Switching Applications High emitter-base voltage: VEBO = 25V (min) High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA) Low on resistance: RON = 1Ω (typ.) (IB = 5mA) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process |
| 描述与应用 | 静音和开关应用 高发射基地电压VEBO= 25V（最小值） HFE：高反向扭转HFE=150（典型值）（VCE=2V，IC=4毫安） 低电阻：RON=1Ω（典型值）（IB=5毫安） 借助内置的偏置电阻 简化电路设计 数量减少了零件和制造工艺 |