请先登录
首页
购物车0

×

商品参数:

  • 型号:RN1904FS
  • 厂家:TOSHIBA
  • 批号:05+NOPB 12+ROHS
  • 整包数量:10000
  • 最小起批量:100
  • 标记/丝印/代码/打字:F3
  • 封装:SOT-963/FS6
  • 技术文档:下载

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) 20V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) 20V
集电极连续输出电流IC Collector Current(IC) 50mA
Q1基极输入电阻R1 Input Resistance(R1) 47KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) 47KΩ/Ohm
Q1电阻比(R1/R2) Q1 Resistance Ratio 1
Q2基极输入电阻R1 Input Resistance(R1) 47KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) 47KΩ/Ohm
Q2电阻比(R1/R2) Q2 Resistance Ratio 1
直流电流增益hFE DC Current Gain(hFE) 120
截止频率fT Transtion Frequency(fT) 250MHz
耗散功率Pc Power Dissipation 50mW
Description & Applications Features • TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) • Two devices are incorporated into a fine pitch small mold (6-pin) package. • Incorporating a bias resistor into a transistor reduces parts count.Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. • Complementary to RN2901FS~RN2906FS APPLICATIONS • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
描述与应用 特点 •东芝晶体管的硅NPN外延式(PCT的进程)(偏置电阻内置晶体管) •两个设备都纳入细间距小型模具(6针)封装。 •将偏置电阻晶体管,减少了部件数量。减少部件数量,能够制造更加紧凑的设备和降低装配成本。 •互补RN2901FS的〜RN2906FS 应用 •开关,逆变电路,接口电路和驱动器电路应用
规格书PDF 下载

×

在线询价:

* 来自:
寄予:
深圳市爱瑞凯电子科技有限公司
商品:
RN1904FS
*主题:
详细内容:
*验证码: