| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V/-50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/-100mA |
| Q1基极输入电阻R1 Input Resistance(R1) | 47KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | 1 |
| Q2基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 0.213 |
| 直流电流增益hFE DC Current Gain(hFE) | 80 |
| 截止频率fT Transtion Frequency(fT) | 250MHz/200MHz |
| 耗散功率Pc Power Dissipation | 100mW/0.1W |
| Description & Applications | Features • TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) • Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. • Incorporating a bias resistor into a transistor reduces parts count.Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
| 描述与应用 | 特点 •东芝晶体管的硅NPN·PNP外延型的（PCT程序）（偏置电阻晶体管） •两个设备都纳入一个极端超小型（5针）封装。 •将偏置电阻晶体管，减少了部件数量。减少零件数，使制造比以往更紧凑的设备和装配成本。 应用 •开关，逆变电路，接口电路和驱动器电路应用 |