| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −35V |
| 集电极连续输出电流ICCollector Current(IC) | -30mA |
| 截止频率fTTranstion Frequency(fT) | 1GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 50 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | |
| 耗散功率PcPoWer Dissipation | 200mW/0.2W |
| Description & Applications | Silicon PNP Planar RF Transistor Applications Self-oscillating ultrahigh frequency mixer stages Features High blocking voltages Transition frequency |
| 描述与应用 | 硅PNP平面RF晶体管 应用 自振超高频混频级 特点 高阻断电压 过渡频率 |