| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -80V/80V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -65V/65V |
| 集电极连续输出电流IC Collector Current(IC) | -100mA/100mA |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~475 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | -250mA/250mA |
| 耗散功率Pc Power Dissipation | 380mW |
| Description & Applications | Features • Dual General Purpose Transistors NPN/PNP Duals (Complementary) • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* |
| 描述与应用 | 特点 •双通用晶体管NPN/ PNP偶（补充） •通过AEC-Q101认证和PPAP能力 •S前缀为汽车和其他应用程序需要独特的网站和控制变更要求 •这些器件是无铅，无卤素免费/ BFR免费，并RoHS标准 |